Vapor deposition unit VVHT 0305

Purpose: Obtaining silicon carbide from the gas phase.

Main technical characteristics:

- Chamber working area diameter - 300 mm, height 500 mm;

- Maximum temperature in the working chamber is 1500 °C;

- Minimum pressure in the chamber when evacuating20 Pa;

The unit is designed for chemical deposition and infiltration, designed for silicon carbide (SiC) from a gas mixture of methyl trichlorosillane, hydrogen and argon.