Vapor deposition unit BN 2.0

Vapor  deposition unit BN 2.0

Purpose: Obtaining high-purity pyrolytic boron nitride from the gas phase.

Main technical characteristics:

- Hexagonal crystal lattice;

- Material obtained density - 1.97-1.99 g / cm3;

- Impurities proportion in the obtained material - not more than 0.01% at;

- Reactor diameter - 110 mm;

- Unit maximum temperature - 2000 °C;

The unit is designed for gas-phase deposition of high-purity hexagonal boron nitride on a graphite substrate. Depending on the gas feed rate and the process time, it is possible to vary the thickness of the material obtained. This unit is unique, designed and manufactured by the Engineering center specialists.

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